| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Panasonic 2SD1266 is a silicon NPN triple diffusion planar type transistor specifically designed for power amplification applications. It offers high forward current transfer ratio (hFE) with satisfactory linearity and a low collector-emitter saturation voltage (VCE(sat)).
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 3A, with a peak collector current (ICP) of 5A. The device has a maximum power dissipation of 35W at a case temperature of 25°C. The junction temperature is rated up to 150°C, and storage temperature ranges from -55°C to +150°C.
This transistor comes in a full-pack TO-220F-A1 package, which allows for easy installation to a heat sink using a single screw. The package is suitable for through-hole mounting.
Electrical specifications include a typical base-emitter voltage (VBE) of 1.8V at IC=3A and VCE=4V. The transition frequency (fT) is a minimum of 30MHz at VCE=10V and IC=0.5A. Switching characteristics are also provided, with a turn-on time of 0.5µs, storage time of 2.5µs, and fall time of 0.4µs under specified conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1266 is 60V.
The continuous collector current (IC) rating for the 2SD1266 is 3A.
The 2SD1266 uses the TO-220F-A1 package.
The maximum junction temperature for the 2SD1266 is 150°C.
The transition frequency (fT) of the 2SD1266 is a minimum of 30MHz.