| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1265 from Panasonic is an NPN Silicon Power Transistor suitable for power switching and amplification circuits. This component is housed in a TO-220AB package, facilitating through-hole mounting.
Key electrical specifications include a maximum collector current of 4A and a collector-emitter voltage of 60V. The maximum power dissipation is rated at 2W, and it can operate at temperatures up to 150°C. The transistor has 3 terminals.
This transistor is part of the Bipolar Junction Transistor (BJT) family, specifically designed as a single, pre-biased type. Its robust construction and electrical characteristics make it a reliable choice for applications requiring moderate power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SD1265 transistor is 4A.
The collector-emitter voltage rating of the 2SD1265 is 60V.
The maximum power dissipation of the 2SD1265 transistor is 2W.
The maximum operating temperature for the 2SD1265 is 150°C.
The 2SD1265 transistor is supplied in a TO-220AB package.