| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SD1248 is a silicon NPN Darlington power transistor specifically designed for low frequency power amplifier applications. This component boasts a high collector-emitter breakdown voltage of 120V minimum, ensuring robust performance in demanding circuits.
Key electrical characteristics include a high DC current gain (hFE) of 1000 minimum at an IC of 4A, making it suitable for amplification tasks requiring significant current handling. The transistor is designed to provide low collector saturation voltage, contributing to efficient power transfer.
While specific package details and operating temperature ranges are not detailed in the provided snippets, the 2SD1248 is identified as a power transistor. Its applications are focused on low-frequency amplification, making it a component of interest for audio amplifiers, power control circuits, and other general-purpose amplification needs where its breakdown voltage and gain characteristics are advantageous.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage of the 2SD1248 is a minimum of 120V.
The 2SD1248 has a minimum DC current gain of 1000 at an IC of 4A.
The 2SD1248 is a silicon NPN Darlington power transistor.
The 2SD1248 is designed for low frequency power amplifier applications.