| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1148 from Toshiba is a silicon NPN triple diffused type power transistor. It is recommended for 70W high-fidelity audio frequency amplifier output stages and is complementary to the 2SB863. This transistor features a maximum collector-emitter voltage (VCEO) of 140V and a maximum collector current (IC) of 10A.
Key electrical characteristics include a typical DC current gain (hFE) ranging from 55 to 160 at 1A collector current, and a transition frequency (fT) of 20MHz at 10V and 1A. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2V at 5A collector current and 0.5A base current.
The device is housed in a TO-220 package, suitable for through-hole mounting. It has a maximum power dissipation of 150W at 25°C case temperature and operates within a junction temperature range of -55°C to 150°C. The storage temperature range is also -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1148 is 140V.
The maximum continuous collector current (IC) for the 2SD1148 is 10A.
The typical DC current gain (hFE) for the 2SD1148 is between 55 and 160 when measured at 5V VCE and 1A IC.
The 2SD1148 is supplied in a TO-220-3 package.
The RoHS status of the 2SD1148 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SD1148 is 1 Unlimited.
The REACH status for the 2SD1148 is REACH Unaffected.