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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40,567 pcs
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40567 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2SD1060R-1E is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Manufactured by On Semiconductor, this device is housed in a through-hole TO-220-3 package, which facilitates easy mounting on PCBs and efficient heat dissipation.
Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50V, a maximum collector current (Ic) of 5A, and a DC current gain (hFE) of 100 at a test condition of Ic=1A, Vce=2V. The collector-emitter saturation voltage (Vce(sat)) is 300mV maximum at Ib=300mA, Ic=3A, ensuring low on-state losses. The transistor offers a transition frequency (ft) of 30MHz, suitable for medium-frequency switching and linear amplification.
Thermal characteristics include a maximum power dissipation of 1.75W and a maximum junction temperature of 150°C. The device is RoHS compliant (unverified), with an MSL rating of 1 (unlimited) and REACH unaffected status. Packaging is through-hole TO-220-3, with a low-inductance leadframe for reliable performance.
Applications include power management circuits, audio amplifiers, DC-DC converter drivers, and general-purpose switching up to 5A. The combination of high current capability, reasonable gain, and TO-220 thermal performance makes this transistor suitable for medium-power designs.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.56 | $0.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 V.
The transistor is packaged in a through-hole TO-220-3 case.
The maximum junction temperature is 150°C.
RoHS compliance is marked as RoHS3 Compliant, but this status is unverified and should be confirmed from the manufacturer.
The maximum collector current is 5 A.
The minimum DC current gain (hFE) is 100 at a test condition of Ic=1A, Vce=2V.
The nominal transition frequency is 30 MHz.