| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,395 pcs
|
1395 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,329 pcs
|
1329 pcs | On Request | 1 | On Request | On Request | 1327+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SCR513RTL is an NPN bipolar junction transistor manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications in surface-mount assemblies.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 50V, a continuous collector current rating of 1A, and a power dissipation limit of 500mW. The DC current gain (hFE) is a minimum of 180 at Ic=50mA, Vce=2V, and the collector-emitter saturation voltage is a maximum of 350mV at Ib=25mA, Ic=500mA. The transition frequency is 360MHz, indicating suitability for moderate-speed switching.
The transistor is housed in an SC-96 surface-mount package with a TSMT3 supplier device package. It has a maximum operating junction temperature of 150°C. The device is declared RoHS3 compliant, MSL 1 (unlimited floor life), and REACH unaffected, though these compliance claims are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.78 | $0.78 |
| 10+ | $0.48 | $0.48 |
| 100+ | $0.31 | $0.31 |
| 500+ | $0.24 | $0.24 |
| 1,000+ | $0.21 | $0.21 |
| 3,000+ | $0.18 | $0.18 |
| 6,000+ | $0.17 | $0.17 |
| 9,000+ | $0.14 | $0.14 |
| 24,000+ | $0.14 | $0.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum collector-emitter breakdown voltage is 50V.
It is available in SC-96 surface-mount package with TSMT3 supplier device package.
Maximum junction temperature is 150°C.
It is declared RoHS3 compliant, though this is unverified.
Minimum hFE is 180 at Ic=50mA, Vce=2V.
Transition frequency is 360MHz.
Maximum Vce(sat) is 350mV at Ib=25mA, Ic=500mA.