| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Junction Temperature |
The Toshiba 2SC790 is a silicon NPN power transistor suitable for power amplifier applications. It features a low collector saturation voltage of 1.4V (max) at 2A and a DC current gain ranging from 40-240.
Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a continuous collector current of 3A. The device can dissipate up to 25W of power at 25℃.
Designed for robust performance, the 2SC790 operates within a junction temperature range of 150℃ and a storage temperature range of -55℃ to 150℃. Its current-gain-bandwidth product is 3MHz.
This transistor is a complement to the 2SA490 type.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC790 is 40V.
The continuous collector current (IC) rating of the 2SC790 is 3A.
The maximum power dissipation for the 2SC790 at 25℃ is 25W.
The DC current gain (hFE) range for the 2SC790 at 0.5A is 40-240.
The current-gain-bandwidth product (fT) of the 2SC790 is 3MHz.
The collector-emitter saturation voltage (VCE(sat)) for the 2SC790 is 1.4V (max) at 2A.
