| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC6126 is a silicon NPN epitaxial transistor suitable for high-speed switching, DC-DC converter, and LCD backlighting applications. It features a high DC current gain (hFE) ranging from 250 to 400 at IC=0.3 A, and a low collector-emitter saturation voltage (VCE(sat)) of 0.18 V (max) at IC=1.0 A and IB=33 mA.
This transistor operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 3 A. Its high-speed switching capability is demonstrated by a typical fall time (tf) of 40 ns. The device is housed in a SC-62 package, suitable for surface mounting.
Absolute maximum ratings include a collector-base voltage (VCBO) of 120 V and a junction temperature (Tj) of 150 °C. The storage temperature range is -55 to 150 °C. The 2SC6126 is designed for applications requiring efficient and fast switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter saturation voltage is 0.18 V maximum.
The typical fall time is 40 ns.
The maximum DC collector current is 3 A, and the pulse collector current is 5 A.
The DC current gain (hFE) is between 250 and 400 at IC=0.3 A.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.