2SC6098-E

The 2SC6098-E is an NPN bipolar junction transistor from On Semiconductor designed for medium-power switching and amplification applications. It features a maximum collector-to-emitter voltage (VCEO) of 80V and a continuous collector current rating of 2.5A, with pulse capability up to 4A. The transistor offers low collector-to-emitter saturation voltage (typically 165mV max at 1A/50mA) and high DC current gain (hFE) ranging from 300 to 600 at 5V/100mA, enabling efficient operation in switching circuits.

This device is built using On Semiconductor's FBET and MBIT processes, which provide large current capacity and high-speed switching performance. The 2SC6098-E is particularly suited for DC/DC converters, relay drivers, lamp drivers, motor drivers, and inverter circuits. It features a high gain-bandwidth product of 350 MHz and fast switching times: turn-on time 40ns, storage time 920ns, and fall time 32ns.

The transistor is available in the TP (TO-251) through-hole package, which is compliant with JEITA/JEDEC SC-64/TO-251 standards. The package has short leads and is suitable for SIP (Single In-line Package) mounting. The minimum packing quantity is 500 pieces per bag. The device is also available in an alternate TP-FA (TO-252) surface-mount package as the 2SC6098-TL-E variant.