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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,520 pcs
|
2520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
568 pcs
|
568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC6082-1E from On Semiconductor is an NPN epitaxial silicon bipolar transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current rating of 15A, making it suitable for medium-power circuits.
The device offers a minimum DC current gain (hFE) of 200 at a test condition of 330mA collector current and 2V collector-emitter voltage, ensuring consistent amplification performance. The collector-emitter saturation voltage is a maximum of 400mV at 375mA base current and 7.5A collector current, contributing to low power loss. With a transition frequency (fT) of 195MHz, it can handle moderate-frequency switching tasks.
Housed in a TO-220-3 Full Pack package (supplier device package: TO-220F-3SG), the transistor supports through-hole mounting for robust mechanical attachment. The maximum junction operating temperature is 150°C, and power dissipation is rated at 2W, providing thermal margin for typical operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.43 | $2.43 |
| 10+ | $1.33 | $1.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
TO-220-3 Full Pack (TO-220F-3SG).
150 °C.
RoHS3 Compliant.
Minimum 200 at Ic=330mA, Vce=2V.
15 A.
195 MHz.