2SC6082-1E NPN bipolar transistor rated for 50V collector-emitter voltage and 15A continuous collector current. Provides 200 minimum DC current gain with a 195MHz transition frequency.
Mfr Part #:

2SC6082-1E

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor rated for 50V collector-emitter voltage and 15A continuous collector current. Provides 200 minimum DC current gain with a 195MHz transition frequency.
Total Stock: 3,088 pcs
$ Price Range: $1.33 - $2.43

2SC6082-1E Available from 2 distributors

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2,520 pcs
2520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
568 pcs
568 pcs On Request 1 On Request On Request On Request On Request On Request

2SC6082-1E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SC6082-1E Description

Short technical summary and product information.

The 2SC6082-1E from On Semiconductor is an NPN epitaxial silicon bipolar transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current rating of 15A, making it suitable for medium-power circuits.

 

The device offers a minimum DC current gain (hFE) of 200 at a test condition of 330mA collector current and 2V collector-emitter voltage, ensuring consistent amplification performance. The collector-emitter saturation voltage is a maximum of 400mV at 375mA base current and 7.5A collector current, contributing to low power loss. With a transition frequency (fT) of 195MHz, it can handle moderate-frequency switching tasks.

 

Housed in a TO-220-3 Full Pack package (supplier device package: TO-220F-3SG), the transistor supports through-hole mounting for robust mechanical attachment. The maximum junction operating temperature is 150°C, and power dissipation is rated at 2W, providing thermal margin for typical operating conditions.

2SC6082-1E Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: On Semiconductor 2SC6082-1E NPN Bipolar Transistor
Subcategory: Single NPN

2SC6082-1E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC6082-1E Estimated Pricing

Qty Low High
1+ $2.43 $2.43
10+ $1.33 $1.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC6082-1E Features

  • NPN epitaxial silicon bipolar transistor.
  • Rated for 50V collector-emitter voltage.
  • Supports 15A continuous collector current.
  • 200 minimum DC current gain at 330mA.
  • TO-220-3 Full Pack through-hole package.

2SC6082-1E Applications

  • Suitable for power switching circuits.
  • Used in motor and relay driver stages.
  • Ideal for DC-DC converter switches.
  • Serves in audio output amplification.

2SC6082-1E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2SC6082-1E?

50 V.

What package is the 2SC6082-1E available in?

TO-220-3 Full Pack (TO-220F-3SG).

What is the maximum operating junction temperature?

150 °C.

Is the 2SC6082-1E RoHS compliant?

RoHS3 Compliant.

What is the DC current gain (hFE) of the 2SC6082-1E?

Minimum 200 at Ic=330mA, Vce=2V.

What is the collector current rating?

15 A.

What is the transition frequency?

195 MHz.

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