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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base Current | |
| Base-to-Emitter Saturation Voltage (VBE(sat)) | |
| Collector Current (Pulse) | |
| Collector to Base Breakdown Voltage (V(BR)CBO) | |
| Collector to Emitter Saturation Voltage (VCE(sat)) | |
| Collector-Emitter Breakdown Voltage (Minimum @ Ic=1 mA, Rbe=∞) | |
| Collector-Emitter Breakdown Voltage (Minimum @ Ic=100 μA, Rbe=0Ω) | |
| Collector-to-Base Voltage (VCBO) | |
| Collector-to-Emitter Voltage (Vces) | |
| Current | |
| DC Current Gain (Minimum @ VCE=-2 V, IC=-1.5 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter to Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-to-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature Range | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC5994-TD-E is an NPN Bipolar Junction Transistor (BJT) manufactured by On Semiconductor. It features a maximum collector-to-emitter voltage (VCEO) of 50V and a continuous collector current rating of 2A (4A pulse). The device is designed for low collector-to-emitter saturation voltage (VCE(sat) typ 135 mV at 1A) and offers high-speed switching with turn-on time of 30 ns typical.
DC current gain (hFE) is typically 200 at 100 mA, 2V, and minimum 40 at 1.5A, 2V. The gain-bandwidth product (fT) is 420 MHz typical. Power dissipation is 1.3W at case temperature 25°C (3.5W on ceramic substrate). The junction temperature maximum is 150°C, with storage range -55 to 150°C.
Packaged in SOT-89 (TO-243AA) surface-mount case, the device is supplied in tape and reel (1000 pcs/reel). Typical applications include voltage regulators, relay drivers, and lamp drivers. The device uses On Semiconductor's MBIT process for low saturation voltage and high current capacity.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.14 | $1.14 |
| 10+ | $0.81 | $0.81 |
| 100+ | $0.51 | $0.51 |
| 500+ | $0.35 | $0.35 |
| 1,000+ | $0.29 | $0.29 |
| 2,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is 50V.
SOT-89 (TO-243AA).
Maximum junction temperature is 150°C. Storage temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this is unverified.
Minimum 200 at VCE=2V, IC=100mA.
2A continuous, 4A pulse.
420 MHz.