2SC5880TV2Q NPN silicon epitaxial planar transistor rated for 60V collector-emitter voltage and 2A collector current. Designed for high-speed switching and low-frequency amplification.
Mfr Part #:

2SC5880TV2Q

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN silicon epitaxial planar transistor rated for 60V collector-emitter voltage and 2A collector current. Designed for high-speed switching and low-frequency amplification.
✓ Total Stock: 2,683 pcs
$ Price Range: $0.12 - $0.16

2SC5880TV2Q Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,683 pcs
2683 pcs On Request 1 On Request On Request 1229+ On Request On Request

2SC5880TV2Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SC5880TV2Q Description

Short technical summary and product information.

The 2SC5880TV2Q is an NPN silicon epitaxial planar transistor from ROHM Semiconductor. It is rated for a collector-emitter voltage of 60V and a continuous collector current of 2A, with a maximum power dissipation of 1W. The device features a typical transition frequency of 200MHz and a DC current gain (hFE) range of 120 to 390, making it suitable for both amplifier and switching applications.

 

This transistor offers high-speed switching performance with typical turn-on, storage, and fall times of 50ns, 120ns, and 35ns respectively at 2A. It also provides a low typical collector-emitter saturation voltage of 200mV at 1A, which helps reduce power loss in switching circuits. The complementary PNP pair is the 2SA2093.

 

The 2SC5880TV2Q is housed in a through-hole ATV package (3-SIP) and is available in tape and reel packaging with a standard quantity of 2500 pieces. It is designed for applications such as low-frequency amplification and high-speed switching.

2SC5880TV2Q Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SC5880TV2Q NPN Silicon Epitaxial Planar Transistor
Subcategory: Single BJT

2SC5880TV2Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC5880TV2Q Estimated Pricing

Qty Low High
2,500+ $0.16 $0.16
5,000+ $0.15 $0.15
7,500+ $0.14 $0.14
12,500+ $0.13 $0.13
17,500+ $0.13 $0.13
25,000+ $0.12 $0.12
62,500+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC5880TV2Q Features

  • NPN silicon epitaxial planar transistor.
  • Rated for 60V collector-emitter voltage.
  • 2A continuous collector current capability.
  • High-speed switching with 35ns fall time.
  • Low saturation voltage of 200mV typical.

2SC5880TV2Q Applications

  • Ideal for high-speed switching circuits.
  • Suitable for low-frequency amplifiers.
  • Use in inductive and capacitive load drivers.
  • Complementary pair with 2SA2093 PNP.

2SC5880TV2Q FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2SC5880TV2Q?

The collector-emitter voltage (VCEO) is 60V.

What is the maximum collector current for this transistor?

The continuous collector current (DC) is 2A, with a pulsed current rating of 4A.

What is the package type of the 2SC5880TV2Q?

It is a through-hole package, specifically a 3-SIP ATV package.

What is the operating temperature range for this device?

The maximum junction temperature is 150°C, and the storage temperature range is -55 to 150°C.

Is the 2SC5880TV2Q RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this information is unverified and has low confidence.

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