Mfr Part #:

2SC5876T106R

2SC5876T106R is an NPN bipolar transistor from ROHM Semiconductor with 60V collector-emitter breakdown voltage and 500mA collector current. It is housed in a UMT3 (SOT-323/SC-70) surface-mount package.

✓ Total Stock: 3,000 pcs

$ Price Range: $0.21 - $0.78

2SC5876T106R Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
ACK ELEKTRONIK ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2SC5876T106R Description

Short technical summary and product information.

The 2SC5876T106R is an NPN medium power transistor from ROHM Semiconductor designed for high-speed switching and low-frequency amplifier applications. It features a collector-emitter breakdown voltage of 60V and a maximum collector current of 500mA, with a peak current capability of 1A.

Key electrical characteristics include a DC current gain (hFE) range of 120 to 390 at 50mA and 2V, with classification ranks Q (120-270) and R (180-390). The transistor offers low collector-emitter saturation voltage, typically 150mV at 100mA collector current and 10mA base current, and a transition frequency of 300MHz. Switching speeds are fast with typical turn-on time of 70ns, storage time of 130ns, and fall time of 80ns.

The device is supplied in the UMT3 package (SOT-323/SC-70) for surface-mount assembly, with a standard tape-and-reel packaging of 3000 pieces per reel. It is complementary to the 2SA2088 PNP transistor.

2SC5876T106R Quick Information

Product Type: Bipolar Junction Transistor (BJT)

Canonical Name: 2SC5876T106R NPN Bipolar Transistor

Subcategory: NPN

2SC5876T106R Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2SC5876T106R Estimated Pricing

Qty	Low	High
1+	$0.78	$0.78
10+	$0.48	$0.48
100+	$0.31	$0.31
500+	$0.24	$0.24
1,000+	$0.21	$0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC5876T106R Features

NPN transistor with 60V VCEO rating.
Maximum collector current of 500mA.
High transition frequency of 300MHz.
Low saturation voltage, typically 150mV.
Surface-mount UMT3 (SOT-323/SC-70) package.

2SC5876T106R Applications

High-speed switching circuits.
Low-frequency amplifier stages.
Inductive and capacitive load driving.
General-purpose signal amplification.

2SC5876T106R FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum collector current of the 2SC5876T106R?

The maximum collector current (Ic) is 500 mA, with a peak current (Icp) of 1 A (10ms pulse).

What is the collector-emitter breakdown voltage of this transistor?

The minimum collector-emitter breakdown voltage (VCEO) is 60 V at Ic = 1 mA.

What package does the 2SC5876T106R come in?

It is supplied in a UMT3 surface-mount package, which is equivalent to SOT-323 and SC-70.

What is the DC current gain (hFE) of the 2SC5876T106R?

The DC current gain ranges from 120 to 390 at Ic = 50 mA and Vce = 2 V, with classification ranks Q (120-270) and R (180-390).

What is the transition frequency of the 2SC5876T106R?

The typical transition frequency (ft) is 300 MHz at Vce = 10 V and Ic = -100 mA.

What is the operating temperature range for this transistor?

The junction temperature (Tj) maximum is 150 °C, and the storage temperature range is -55 to +150 °C.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	ROHM Semiconductor
Current	500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120
Frequency	300 MHz
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power	200 mW
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	UMT3
Tape & Reel	Taping, Reel size 180mm, Tape width 8mm
Termination Style	SMD
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV max / 150 mV typ
Voltage	60 V