2SC5824T100R 2SC5824T100R is an NPN power transistor from ROHM Semiconductor with 60V collector-emitter breakdown voltage and 3A collector current. It is designed for high-speed switching and low-frequency amplification.
Mfr Part #:

2SC5824T100R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
2SC5824T100R is an NPN power transistor from ROHM Semiconductor with 60V collector-emitter breakdown voltage and 3A collector current. It is designed for high-speed switching and low-frequency amplification.
✓ Total Stock: 4,000 pcs
$ Price Range: $0.20 - $1.00

2SC5824T100R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 0841+ On Request On Request

2SC5824T100R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SC5824T100R Description

Short technical summary and product information.

The 2SC5824T100R is an NPN power transistor manufactured by ROHM Semiconductor, housed in a surface-mount MPT3 (SOT-89) package. It features a collector-emitter breakdown voltage (VCEO) of 60V and a continuous collector current (IC) rating of 3A, with a peak current capability of 6A under pulsed conditions.

 

This transistor offers a typical DC current gain (hFE) of 180 at 100mA and 2V, with a minimum of 120 and maximum of 390. It exhibits low collector-emitter saturation voltage, typically 200mV at 2A collector current and 200mA base current, enabling efficient switching. The transition frequency (fT) is 200 MHz, making it suitable for high-speed switching applications.

 

Power dissipation is rated at 2W when mounted on a ceramic board (40x40x0.7mm) and 0.5W on a reference land. The device operates over a junction temperature range up to 150°C. It is supplied in tape-and-reel packaging with 1000 units per reel, using 12mm tape on a 180mm reel.

2SC5824T100R Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SC5824T100R NPN Power Transistor
Subcategory: Single Bipolar Junction Transistor

2SC5824T100R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC5824T100R Estimated Pricing

Qty Low High
1+ $1.00 $1.00
10+ $0.62 $0.62
100+ $0.40 $0.40
500+ $0.31 $0.31
1,000+ $0.28 $0.28
2,000+ $0.24 $0.24
5,000+ $0.22 $0.22
10,000+ $0.21 $0.21
25,000+ $0.20 $0.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC5824T100R Features

  • NPN power transistor with 60V VCEO.
  • 3A continuous collector current rating.
  • Low saturation voltage of 200mV typical.
  • 200 MHz transition frequency for fast switching.
  • Surface mount MPT3 (SOT-89) package.

2SC5824T100R Applications

  • High-speed switching circuits.
  • Low frequency amplifier stages.
  • Inductive and capacitive load driving.
  • General purpose power management.

2SC5824T100R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2SC5824T100R?

The collector-emitter breakdown voltage (VCEO) is 60V.

What is the maximum collector current rating?

The continuous collector current (IC) is 3A, with a peak current (ICP) of 6A under pulsed conditions (Pw ≤ 10μs, duty ≤ 10%).

What package is the 2SC5824T100R available in?

It is available in a surface-mount MPT3 package, which is equivalent to SOT-89 (TO-243AA).

What is the operating junction temperature range?

The operating junction temperature (Tj) is rated up to 150°C, with a storage temperature range of -55°C to +150°C.

Is the 2SC5824T100R RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the DC current gain (hFE) of this transistor?

The DC current gain (hFE) is minimum 180 at Ic=100mA and Vce=2V (R rank), with a range of 120 to 390 depending on the rank.

Does the 2SC5824T100R have a complementary PNP transistor?

Yes, the complementary PNP transistor is the 2SA2071 from ROHM Semiconductor.

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