2SC5754-T2-A Renesas 2SC5754-T2-A is an NPN RF transistor designed for high-frequency applications. It features a 20 GHz transition frequency, 500 mA collector current, and 735 mW power dissipation.
Mfr Part #:

2SC5754-T2-A

Available from 1 distributors
Mfr Name: Renesas
Renesas
Renesas 2SC5754-T2-A is an NPN RF transistor designed for high-frequency applications. It features a 20 GHz transition frequency, 500 mA collector current, and 735 mW power dissipation.
✓ Total Stock: 3,000 pcs

2SC5754-T2-A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

2SC5754-T2-A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Voltage

2SC5754-T2-A Description

Short technical summary and product information.

The Renesas 2SC5754-T2-A is an NPN bipolar junction transistor optimized for RF applications. It is housed in a surface-mount SOT-343F package and offers a maximum collector-emitter voltage of 5 V and a maximum collector current of 500 mA. The transistor provides a typical transition frequency (fT) of 20 GHz and a minimum DC current gain (hFE) of 40 at 100 mA and 3 V. With a maximum power dissipation of 735 mW, it is suitable for low-power RF amplification and switching circuits. The device operates at a maximum junction temperature of 150 °C. The SOT-343F package enables compact PCB designs for wireless communication modules and other high-frequency systems.

2SC5754-T2-A Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: Renesas 2SC5754-T2-A NPN RF Transistor
Subcategory: NPN

2SC5754-T2-A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

2SC5754-T2-A Features

  • NPN RF transistor with 20 GHz transition frequency.
  • Maximum collector current of 500 mA.
  • Power dissipation up to 735 mW.
  • Surface-mount SOT-343F package.
  • Minimum DC current gain of 40 at 100 mA.

2SC5754-T2-A Applications

  • Ideal for RF amplifier stages in wireless devices.
  • Used in low-power oscillator circuits.
  • Suitable for high-frequency switching applications.
  • Common in communication module front-ends.

2SC5754-T2-A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

5 V.

What package is the 2SC5754-T2-A available in?

SOT-343F surface-mount package.

What is the maximum operating junction temperature?

150 °C.

Is the 2SC5754-T2-A RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the transition frequency of this transistor?

Typical 20 GHz.

What is the minimum DC current gain?

Minimum 40 at 100 mA collector current and 3 V collector-emitter voltage.

What is the maximum collector current?

500 mA.

Home

Categories