| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 2SC5754-T2-A is an NPN bipolar junction transistor optimized for RF applications. It is housed in a surface-mount SOT-343F package and offers a maximum collector-emitter voltage of 5 V and a maximum collector current of 500 mA. The transistor provides a typical transition frequency (fT) of 20 GHz and a minimum DC current gain (hFE) of 40 at 100 mA and 3 V. With a maximum power dissipation of 735 mW, it is suitable for low-power RF amplification and switching circuits. The device operates at a maximum junction temperature of 150 °C. The SOT-343F package enables compact PCB designs for wireless communication modules and other high-frequency systems.
5 V.
SOT-343F surface-mount package.
150 °C.
It is listed as RoHS3 compliant, but this is unverified.
Typical 20 GHz.
Minimum 40 at 100 mA collector current and 3 V collector-emitter voltage.
500 mA.