| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Lead Style | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The 2SC5753-T2-A is an NPN silicon high-frequency transistor manufactured by CEL (California Eastern Laboratories). It is fabricated using NEC's HFT3 wafer process and is designed for medium power RF applications from 100 MHz to 3 GHz. Key electrical specifications include a maximum collector-emitter breakdown voltage of 6 V, a maximum collector current of 100 mA, and a power dissipation of 205 mW when mounted on a standard glass epoxy PCB.
This transistor offers a typical transition frequency (ft) of 12 GHz, making it suitable for driver stages in mobile and fixed wireless systems. It provides a typical output power at 1 dB compression (P1dB) of 18 dBm at 1.8 GHz, with a linear gain of 13 dB. The noise figure is typically 1.7 dB at 2 GHz, and the maximum available gain is 13.5 dB. The DC current gain (hFE) ranges from 75 to 150 at 30 mA collector current.
The device is housed in CEL's low-profile M04 package, which has a SOT-343 footprint and a height of only 0.59 mm. The flat lead style enhances RF performance. The package is surface mount and is supplied in tape and reel packaging with 3000 units per reel. The operating junction temperature range is up to 150°C, and the storage temperature range is -65°C to +150°C.
The maximum collector-emitter breakdown voltage (Vceo) is 6 V.
The 2SC5753-T2-A is housed in a SOT-343F surface mount package with flat leads.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to +150°C.
The device is listed as RoHS3 compliant, but this status is unverified.
The typical transition frequency (ft) is 12 GHz.
The typical P1dB is 18 dBm at 1.8 GHz.
The hFE ranges from 75 minimum to 150 maximum, with a typical value of 120 at Vce=3V, Ic=30mA.