| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present | |
| Supplier Device Package | |
| Vce Saturation (Max) |
The 2SC5730TLR is a surface-mount NPN bipolar junction transistor (BJT) manufactured by Rohm Semiconductor. It is designed for general-purpose applications requiring a breakdown voltage of up to 30V and a maximum collector current of 1A.
Key electrical characteristics include a maximum collector cutoff current of 1µA and a minimum DC current gain (hFE) of 180 at 100mA and 2V. The transistor has a transition frequency of 270MHz and a maximum collector-emitter saturation voltage of 300mV at 50mA and 500mA. The maximum power dissipation is rated at 500mW.
This component is supplied in a TSMT3 package, also known as TO-236-3, SC-59, or SOT-23-3, suitable for surface mounting. The Digi-Reel packaging indicates it is available on tape and reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) is 1A.
The minimum DC current gain (hFE) is 180 at 100mA collector current and 2V collector-emitter voltage.
The transition frequency is 270MHz.
The maximum power dissipation is 500mW.
The maximum Vce saturation voltage is 300mV at 50mA base current and 500mA collector current.
The maximum collector-emitter breakdown voltage is 30V.
The 2SC5730TLR is available in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3) with supplier device package TSMT3.