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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-to-Emitter Saturation Voltage | |
| Collector Current | |
| Collector Current (Pulse) | |
| Collector-to-Base Breakdown Voltage | |
| Collector-to-Base Voltage | |
| Collector-to-Emitter Breakdown Voltage | |
| Collector-to-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-to-Base Breakdown Voltage | |
| Emitter-to-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| P_C (Nominal @ Ta=25 °C) | |
| P_C (Nominal @ Tc=25 °C) | |
| Power | |
| SVHC Present | |
| Standard Package Quantity | |
| Supplier Device Package | |
| T_STG (Minimum/Maximum) | |
| T_stg (Typical @ See test circuit) | |
| Tape & Reel | |
| Transistor Type | |
| Turn On Time | |
| V_CE(sat) (Typical/Maximum @ Ic=1 A, Ib=50 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC5706-TL-H is an NPN bipolar junction transistor manufactured by On Semiconductor (onsemi). It is designed for high-current switching applications, offering a collector-to-emitter voltage rating of 50V and a collector current rating of 5A (7.5A pulse). The device achieves a low collector-to-emitter saturation voltage of 135mV maximum at 1A collector current, which helps minimize power losses in switching circuits.
Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 560 at 2V collector-emitter voltage and 500mA collector current, and a gain-bandwidth product of 400MHz. The transistor also features a low output capacitance of 15pF and fast switching times, with a typical turn-on time of 35ns and storage time of 300ns. These characteristics make it suitable for high-frequency switching applications.
The device is housed in a TO-252-3 (DPak) surface-mount package with a supplier device package designation of TP-FA. It supports a power dissipation of 0.8W at ambient temperature and 15W at case temperature, with an operating junction temperature up to 150°C. The storage temperature range is -55°C to +150°C.
Typical applications include DC/DC converters, relay drivers, lamp drivers, and motor drivers, where its high current capability and low saturation voltage are advantageous. The transistor is available in tape and reel packaging with a standard quantity of 700 pieces per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.08 | $2.08 |
| 10+ | $1.33 | $1.33 |
| 100+ | $0.90 | $0.90 |
| 700+ | $0.64 | $0.64 |
| 1,400+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-to-emitter voltage (VCEO) is 50V, with a collector-to-base voltage (VCBO) of 100V.
The maximum continuous collector current is 5A, with a pulse current rating of 7.5A.
The transistor is housed in a TO-252-3 (DPak) surface-mount package, with supplier device package designation TP-FA.
The operating junction temperature is rated up to 150°C, with a storage temperature range of -55°C to +150°C.
The DC current gain ranges from 200 to 560, measured at Vce=2V and Ic=500mA.
The collector-to-emitter saturation voltage is 90mV typical and 135mV maximum at Ic=1A, Ib=50mA.
The gain-bandwidth product (fT) is 400MHz, measured at Vce=10V and Ic=500mA.