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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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684 pcs
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684 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC5706-P-E is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter breakdown voltage of 100V and a continuous collector current of 5A.
Key electrical characteristics include a maximum power dissipation of 800mW, a transition frequency (fT) of 400MHz, and a minimum DC current gain (hFE) of 200 at 500mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is typically 240mV at a base current of 100mA and collector current of 2A.
The device is housed in a TO-251-3 short leads package (also known as IPak or TO-251AA) with through-hole mounting. The supplier device package is designated TP.
The maximum collector-emitter breakdown voltage is 100V.
The maximum continuous collector current is 5A.
It is available in a TO-251-3 short leads package (IPak, TO-251AA) with through-hole mounting.
The typical transition frequency (fT) is 400MHz.
The maximum power dissipation is 800mW.
The minimum DC current gain is 200 at a collector current of 500mA and collector-emitter voltage of 2V.
The maximum collector-emitter saturation voltage is 240mV at a base current of 100mA and collector current of 2A.