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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
184,960 pcs
|
184960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
66,263 pcs
|
66263 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,655 pcs
|
3655 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Collector - Emitter Saturation Voltage | |
| Collector Current - Continuous | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Cutoff Current | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum/Maximum @ VCE = 6 V, IC = 1 mA) | |
| ESD Performance - Human Body Model | |
| ESD Performance - Machine Model | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Cutoff Current | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Transition Frequency | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC5658M3T5G is an NPN silicon general purpose amplifier transistor from On Semiconductor. It is designed for low power surface mount applications where board space is at a premium, housed in the compact SOT-723 package.
Key electrical characteristics include a minimum collector-emitter breakdown voltage of 50V, a maximum continuous collector current of 150mA, and a maximum power dissipation of 260mW. The device offers a high DC current gain (hFE) range of 120 to 560 at VCE = 6V, IC = 1mA, and a typical transition frequency of 180MHz. It features a low collector-emitter saturation voltage of 0.4V maximum at IC = 50mA, IB = 5mA.
The transistor is Pb-Free and AEC-Q101 qualified (NSV prefix variant available). It is supplied in tape and reel packaging with 8000 units per reel. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.18 | $0.18 |
| 10+ | $0.11 | $0.11 |
| 100+ | $0.07 | $0.07 |
| 500+ | $0.05 | $0.05 |
| 2,500+ | $0.04 | $0.04 |
| 5,000+ | $0.03 | $0.03 |
| 8,000+ | $0.03 | $0.03 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is 50V.
The maximum continuous collector current (IC) is 150mA.
The device is housed in a surface mount SOT-723 package.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.
The datasheet states the device is Pb-Free. RoHS3 compliance is indicated but unverified.
For the 2SC5658M3T5G variant, the hFE range is 120 to 560 at VCE = 6V, IC = 1mA.
The typical transition frequency (ft) is 180MHz at VCE = 12V, IC = 2mA, f = 30MHz.