2SC5569-TD-E

The 2SC5569-TD-E is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and high current capability.

With a maximum collector-emitter voltage (Vceo) of 50V and a maximum collector current (Ic) of 7A, this transistor can handle significant power in a compact surface-mount package. The typical transition frequency (ft) is 330 MHz, making it suitable for high-speed switching circuits. The DC current gain (hFE) is a minimum of 200 at Ic=500mA and Vce=2V, ensuring consistent performance. The collector-emitter saturation voltage (Vce(sat)) is only 240mV at Ib=175mA and Ic=3.5A, minimizing conduction losses.

The device is housed in a TO-243AA package, also known as SOT-89/PCP-1, which is a surface-mount package designed for efficient heat dissipation. The maximum power dissipation is 1.3W, and the operating junction temperature range extends up to 150°C. The package is suitable for automated assembly and is compatible with standard reflow soldering processes.

The 2SC5569-TD-E is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). It is a reliable choice for designs requiring a high-current NPN transistor in a small footprint.