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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
374,868 pcs
|
374868 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
8,599 pcs
|
8599 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2SC5566-TD-E is an NPN bipolar junction transistor from On Semiconductor designed for general purpose switching and amplification applications. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 4A, making it suitable for medium-power circuits.
With a DC current gain (hFE) of 200 minimum at 500mA and 2V, and a transition frequency of 400 MHz, this transistor offers good performance for moderate-speed switching. The maximum power dissipation is 1.3W, and the device can operate at junction temperatures up to 150°C.
This transistor is housed in a surface-mount PCP package (TO-243AA), enabling compact PCB designs. It is RoHS3 compliant and has an MSL rating of 1 (unlimited), simplifying handling and assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.04 | $1.04 |
| 10+ | $0.65 | $0.65 |
| 100+ | $0.42 | $0.42 |
| 1,000+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 50V.
The maximum collector current (Ic) is 4A.
The maximum power dissipation is 1.3W.
The transistor is housed in a surface mount PCP package (TO-243AA).
The maximum operating junction temperature is 150°C.
The part is listed as RoHS3 Compliant, though this is unverified.