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2SC5551AF-TD-E RF NPN bipolar transistor rated for 30V collector-to-emitter voltage and 300mA continuous collector current. Features a typical gain-bandwidth product of 3.5 GHz.
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2SC5551AF-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
RF NPN bipolar transistor rated for 30V collector-to-emitter voltage and 300mA continuous collector current. Features a typical gain-bandwidth product of 3.5 GHz.
✓ Total Stock: 915 pcs

2SC5551AF-TD-E Available from 1 distributor

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2SC5551AF-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
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2SC5551AF-TD-E Description

Short technical summary and product information.

The 2SC5551AF-TD-E is an RF NPN bipolar transistor manufactured by onsemi (formerly ON Semiconductor). It is designed for high-frequency amplification and switching applications up to 3.5 GHz.

 

Key electrical specifications include a collector-to-emitter breakdown voltage (VCEO) of 30 V, a continuous collector current (IC) of 300 mA (600 mA pulse), and a typical gain-bandwidth product (fT) of 3.5 GHz. DC current gain (hFE) ranges from 90 to 270 at VCE = 5 V, IC = 50 mA. Output capacitance (Cob) is typically 2.9 pF.

 

The device is housed in a PCP package (SOT-89, SC-62, TO-243) with a standard pinout of base, collector, and emitter. Maximum collector dissipation is 1.3 W when mounted on a ceramic substrate. The junction temperature range is -55°C to +150°C.

 

This transistor is Pb-free and suitable for surface mount assembly. It is supplied in tape and reel packaging with a quantity of 1,000 pieces per reel.

2SC5551AF-TD-E Quick Information

Product Type: RF Bipolar Transistor
Series: 2SC5551A
Canonical Name: 2SC5551AF-TD-E RF NPN Bipolar Transistor
Subcategory: RF Transistors

2SC5551AF-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: Yes

2SC5551AF-TD-E Features

  • High fT of 3.5 GHz typical.
  • 300 mA continuous collector current.
  • 30 V collector-to-emitter breakdown voltage.
  • Pb-free and RoHS compliant.
  • Surface mount PCP SOT-89 package.

2SC5551AF-TD-E Applications

  • RF amplifier circuits up to 3.5 GHz.
  • High-frequency oscillator designs.
  • Wireless communication transmitter stages.
  • RF signal switching applications.

2SC5551AF-TD-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-to-emitter voltage (VCEO) of the 2SC5551AF-TD-E?

30 V.

What is the typical gain-bandwidth product (fT) of this transistor?

3.5 GHz.

What package type does the 2SC5551AF-TD-E use?

PCP package, also known as SOT-89, SC-62, or TO-243.

Is the 2SC5551AF-TD-E RoHS compliant?

Yes, it is a Pb-free device.

What is the maximum collector current rating?

300 mA continuous, 600 mA pulse.

What is the operating junction temperature range?

-55°C to +150°C.

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