| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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Renesas 2SC5508-T2-A is an NPN RF bipolar junction transistor intended for high-frequency signal amplification. The device is specified for a collector current of 35 mA, a collector-emitter voltage of 3.3 V, and a power dissipation of 115 mW. It provides a minimum DC current gain of 50 at 5 mA and 2 V.
At 2 GHz, the transistor delivers a typical gain of 17 dB and a typical noise figure of 1.1 dB. With a frequency rating of 25 GHz, the 2SC5508-T2-A is suitable for RF and microwave circuits that require consistent gain and low noise performance. The combination of moderate current and low power dissipation makes it appropriate for battery-powered or low-power designs.
The part is offered in a surface-mount SOT-343F package, which is well suited for compact RF layouts. It can operate up to a junction temperature of 150°C, allowing deployment in thermally constrained environments. The NPN polarity simplifies bias network design in common-emitter amplifier configurations.
3.3 V.
SOT-343F surface-mount package.
150°C (junction temperature).
The product record lists it as RoHS3 compliant. Note: compliance status is unverified and should be confirmed with the manufacturer.
17 dB.
1.1 dB.
50 at 5 mA and 2 V.