| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,100 pcs
|
26100 pcs | On Request | 1 | On Request | On Request | 2012 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gain | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Transistor Type |
The NEC 2SC5455-T1 is an NPN RF transistor suitable for various electronic applications requiring high gain and low noise. This component features a collector-emitter breakdown voltage of 6V and a maximum power dissipation of 200mW. It operates efficiently with a typical gain of 10dB and a transition frequency of 12GHz.
The transistor is housed in a compact SOT-143 surface-mount package, making it ideal for space-constrained designs. The operating temperature range extends up to 150°C (TJ), ensuring reliability in demanding environments. Its NPN epitaxial silicon construction is designed for medium-output applications, offering a minimum DC current gain (hFE) of 75 at 30mA and 3V.
Key electrical characteristics include a maximum collector current (Ic) of 100mA and a noise figure of 1.5dB at 2GHz. The 2SC5455-T1 is packaged in a tape and reel format for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 6V.
The maximum power dissipation is 200mW.
The transition frequency is 12GHz.
The typical gain is 10dB.
The 2SC5455-T1 is an NPN transistor.
The package type is SOT-143.
The operating temperature is 150°C (TJ).