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2SC5415AF-TD-E The ON Semiconductor 2SC5415AF-TD-E is an NPN RF transistor with a 12V collector-emitter voltage and 100mA continuous collector current. It is supplied in a SOT-89-3 package.
Mfr Part #:

2SC5415AF-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor 2SC5415AF-TD-E is an NPN RF transistor with a 12V collector-emitter voltage and 100mA continuous collector current. It is supplied in a SOT-89-3 package.
✓ Total Stock: 70,000 pcs
$ Price Range: $0.24

2SC5415AF-TD-E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
70,000 pcs
On Request
70000 pcs On Request 1 On Request On Request On Request On Request On Request
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2SC5415AF-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SC5415AF-TD-E Description

Short technical summary and product information.

The 2SC5415AF-TD-E is an NPN RF transistor manufactured by ON Semiconductor. It is designed for RF applications and features a maximum collector-emitter voltage (VCEO) of 12V and a continuous collector current of 100mA. The transistor has a minimum DC collector/base gain (hFE) of 70 and a transition frequency (fT) of 6.7 GHz.

 

This component is housed in a SOT-89-3 surface-mount package, suitable for through-hole mounting. The power dissipation (Pd) is rated at 800mW. The emitter-base voltage (VEBO) is 2V.

 

This RF transistor is suitable for various electronic circuits requiring amplification or switching at radio frequencies. Its specifications make it a component for signal processing and RF amplification stages.

2SC5415AF-TD-E Quick Information

Product Type: RF Transistor
Canonical Name: 2SC5415AF-TD-E RF Transistor
Subcategory: RF Transistor

2SC5415AF-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SC5415AF-TD-E Estimated Pricing

Qty Low High
1+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC5415AF-TD-E Features

  • NPN RF transistor by ON Semiconductor.
  • 12V collector-emitter voltage maximum.
  • 100mA continuous collector current.
  • 6.7 GHz transition frequency.
  • SOT-89-3 package for through-hole mounting.

2SC5415AF-TD-E Applications

  • RF amplifier stage component
  • Oscillator circuit use
  • Wireless transmitter driver
  • Low-power RF switching
  • High-frequency signal processing

2SC5415AF-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SC5415AF-TD-E?

12 V.

What is the transition frequency of this transistor?

6.7 GHz.

What is the maximum collector current rating?

100 mA.

What is the power dissipation capability?

800 mW.

What is the minimum DC current gain (hFE)?

70.

What package type is the 2SC5415AF-TD-E available in?

SOT-89-3 with through-hole mounting.

What is the mounting style of this transistor?

Through Hole.

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