| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24,049 pcs
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24049 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC5415AE-TD-E is an NPN RF bipolar junction transistor manufactured by onsemi. It is designed for high-frequency applications, featuring a typical gain-bandwidth product (fT) of 6.7GHz and a forward transfer gain of 9dB typical at 1GHz. The device supports a maximum collector-to-emitter voltage of 12V and a maximum collector current of 100mA.
Electrical characteristics include a DC current gain (hFE) ranging from 90 to 270 at VCE=5V and IC=30mA, and a typical noise figure of 1.1dB at 1GHz. The transistor is housed in a surface-mount PCP package (TO-243AA) and is rated for a maximum power dissipation of 800mW when mounted on a ceramic substrate.
This RF transistor is suitable for use in RF amplifier and oscillator circuits where high gain and low noise are required. The PCP package offers a compact footprint for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) is 12V.
The typical gain-bandwidth product (fT) is 6.7GHz, with a minimum of 5GHz at VCE=5V and IC=30mA.
The device is available in a surface-mount PCP package, which corresponds to TO-243AA (SC-62, SOT-89).
The maximum junction temperature (Tj) is 150°C.
The part is marked as RoHS3 compliant in the database, but this is unverified and should be confirmed with the manufacturer.
The typical noise figure is 1.1dB at VCE=5V, IC=7mA, and f=1GHz, with a maximum of 2dB.
The DC current gain (hFE) ranges from 90 to 270 at VCE=5V and IC=30mA.