2SC5415AE-TD-E The 2SC5415AE-TD-E is an NPN RF bipolar transistor from onsemi with a typical gain-bandwidth product of 6.7GHz and a collector current rating of 100mA. It comes in a surface-mount PCP (TO-243AA) package.
Mfr Part #:

2SC5415AE-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2SC5415AE-TD-E is an NPN RF bipolar transistor from onsemi with a typical gain-bandwidth product of 6.7GHz and a collector current rating of 100mA. It comes in a surface-mount PCP (TO-243AA) package.
✓ Total Stock: 24,049 pcs
$ Price Range: $0.15

2SC5415AE-TD-E Available from 1 distributor

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2SC5415AE-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Lead Style
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Voltage

2SC5415AE-TD-E Description

Short technical summary and product information.

The 2SC5415AE-TD-E is an NPN RF bipolar junction transistor manufactured by onsemi. It is designed for high-frequency applications, featuring a typical gain-bandwidth product (fT) of 6.7GHz and a forward transfer gain of 9dB typical at 1GHz. The device supports a maximum collector-to-emitter voltage of 12V and a maximum collector current of 100mA.

 

Electrical characteristics include a DC current gain (hFE) ranging from 90 to 270 at VCE=5V and IC=30mA, and a typical noise figure of 1.1dB at 1GHz. The transistor is housed in a surface-mount PCP package (TO-243AA) and is rated for a maximum power dissipation of 800mW when mounted on a ceramic substrate.

 

This RF transistor is suitable for use in RF amplifier and oscillator circuits where high gain and low noise are required. The PCP package offers a compact footprint for space-constrained designs.

2SC5415AE-TD-E Quick Information

Product Type: RF Transistor
Series: 2SC5415A
Canonical Name: 2SC5415AE-TD-E RF Transistor
Subcategory: RF Transistor

2SC5415AE-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC5415AE-TD-E Estimated Pricing

Qty Low High
4,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC5415AE-TD-E Features

  • High gain of 9dB at 1GHz.
  • High cut-off frequency of 6.7GHz.
  • Low noise figure of 1.1dB typical.
  • Surface-mount PCP package.
  • Rated for 12V collector-emitter voltage.

2SC5415AE-TD-E Applications

  • Ideal for RF amplifier circuits.
  • Used in low-noise RF front ends.
  • Suitable for oscillator applications.
  • Common in wireless communication modules.

2SC5415AE-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-to-emitter voltage of the 2SC5415AE-TD-E?

The maximum collector-to-emitter voltage (VCEO) is 12V.

What is the gain-bandwidth product of the 2SC5415AE-TD-E?

The typical gain-bandwidth product (fT) is 6.7GHz, with a minimum of 5GHz at VCE=5V and IC=30mA.

What is the package type of the 2SC5415AE-TD-E?

The device is available in a surface-mount PCP package, which corresponds to TO-243AA (SC-62, SOT-89).

What is the maximum operating junction temperature?

The maximum junction temperature (Tj) is 150°C.

Is the 2SC5415AE-TD-E RoHS compliant?

The part is marked as RoHS3 compliant in the database, but this is unverified and should be confirmed with the manufacturer.

What is the typical noise figure of the 2SC5415AE-TD-E?

The typical noise figure is 1.1dB at VCE=5V, IC=7mA, and f=1GHz, with a maximum of 2dB.

What is the DC current gain range of the 2SC5415AE-TD-E?

The DC current gain (hFE) ranges from 90 to 270 at VCE=5V and IC=30mA.

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