| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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349 pcs
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349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC5358-R is an NPN bipolar transistor housed in a TO-3P package. It is engineered for robust performance with a maximum collector-emitter voltage (Vce) of 230V and a continuous collector current (Ic) of 15A. The device can dissipate up to 150W of power.
This transistor features a DC current gain (hFE) ranging from 55 to 160 for the -R variant, and a minimum transition frequency (fT) of 30MHz. The operating and storage junction temperature range is from -55°C to +150°C, ensuring reliability across various environmental conditions.
Its complementary PNP transistor is the 2SA1986. The 2SC5358-R can be replaced by several other part numbers, including 2SC3320, 2SC5200, and MJW3281A, among others. This transistor is suitable for various power switching and amplification circuits where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the 2SC5358-R is 230V.
The continuous collector current (Ic) rating for the 2SC5358-R is 15A.
The 2SC5358-R has a maximum power dissipation (Pd) of 150W.
The DC current gain (hFE) for the 2SC5358-R ranges from 55 to 160.
The operating and storage junction temperature range for the 2SC5358-R is -55°C to +150°C.
The 2SC5358-R is supplied in a TO-3P package.