| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
390 pcs
|
390 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Storage Temperature | |
| Weight |
The Toshiba 2SC5354 is a silicon NPN triple diffused transistor suitable for high-speed and high-voltage switching applications, including switching regulators and high-speed DC-DC converters. It features excellent switching times with a typical rise time of 0.7 μs and a fall time of 0.5 μs when handling a collector current of 2 A.
This transistor boasts a high breakdown voltage of 800 V (VCEO) and a collector-base voltage (VCBO) of 900 V. It can handle a continuous collector current of up to 5 A and a pulse collector current of 8 A. The power dissipation is rated at 100 W at 25°C.
The 2SC5354 is housed in a 2-16C1A package, weighing approximately 4.7 g. Its operating junction temperature range is from -55°C to 150°C, with a storage temperature range of the same limits. This component is designed for applications requiring reliable high-speed switching performance in demanding voltage and current conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC5354 is 800 V.
The 2SC5354 has a maximum rise time (tr) of 0.7 μs and a maximum fall time (tf) of 0.5 μs when the collector current is 2 A.
The maximum continuous collector current (IC) for the 2SC5354 is 5 A.
The 2SC5354 is supplied in the 2-16C1A package.