| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC5353 is a silicon NPN transistor manufactured using a triple diffused PCT process. It is specifically designed for applications such as switching regulators and high-voltage switching circuits, as well as high-speed DC-DC converters.
Key electrical characteristics include a high collector-emitter breakdown voltage (VCEO) of 800 V and a collector-base breakdown voltage (VCBO) of 900 V. The device can handle a continuous collector current (IC) of up to 3 A and a pulse collector current (ICP) of up to 5 A. Its DC current gain (hFE) is a minimum of 10 at IC = 1 mA and 15 at IC = 0.15 A.
Switching performance is notable, with a maximum rise time (tr) of 0.7 μs and a maximum fall time (tf) of 0.5 μs. The storage time (tstg) is a maximum of 4.0 μs. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.0 V, and the base-emitter saturation voltage (VBE(sat)) is a maximum of 1.3 V under specific test conditions.
The transistor is housed in a SC-67 package and has a maximum power dissipation (PC) of 25 W at 25°C. The maximum junction temperature (Tj) is 150°C, and the storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC5353 is 800 V.
The maximum continuous collector current (IC) for the 2SC5353 is 3 A.
The maximum power dissipation (PC) for the 2SC5353 is 25 W at 25°C.
The maximum junction temperature (Tj) for the 2SC5353 is 150°C.
The 2SC5353 transistor is supplied in an SC-67 package.