| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
995 pcs
|
995 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Lead Style | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Voltage |
The 2SC5347AF-TD-E is an NPN RF bipolar transistor from On Semiconductor, designed for high-frequency amplification up to 1 GHz. It features a maximum collector-to-emitter voltage of 12 V and a collector current of 150 mA, with a typical gain-bandwidth product of 4.7 GHz. The device offers a typical noise figure of 1.8 dB and a forward transfer gain of 8 dB at 1 GHz, making it suitable for VHF/UHF wideband amplifier applications.
The transistor is housed in a PCP package (TO-243AA, equivalent to SOT-89), which is a surface-mount package with three leads. It has a maximum collector dissipation of 1.3 W when mounted on a ceramic substrate, and a junction temperature rating of 150°C. The storage temperature range is -55 to +150°C.
The 2SC5347A series is available in hFE ranks D, E, and F, with this variant (F rank) offering a DC current gain range of 135 to 270 at 50 mA and 5 V. The device is Pb-free and packaged in a reel of 1000 pieces with packing type TD.
12 V.
TO-243AA (PCP, also known as SOT-89).
-55 to +150 °C.
It is listed as RoHS3 compliant, but this status is unverified.
4.7 GHz typical.
1.8 dB typical, 3.0 dB maximum.
60 to 270 (hFE) depending on rank. This variant (F rank) has 135 to 270.