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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
465 pcs
|
465 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Base Current (IB) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Cut-off Current (ICBO) | |
| Collector Output Capacitance (COB) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| IC (Maximum) | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Operating Temperature | |
| Package Weight | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| TSTG (Minimum/Maximum) | |
| Transistor Type | |
| Transition Frequency (fT) | |
| Turn-On Time (ton) | |
| VCE(sat) (Maximum @ IC=1.8 A, IB=0.36 A) | |
| VCEO (Maximum) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum/Maximum @ Vce=4 V, Ic=1.8 A) | |
| pc (Maximum @ Tc=25 °C) | |
| tstg (Maximum @ Vcc=250 V, Ic=1.8 A, Ib 1=0.27 A, Ib 2=-0.9 A) |
The 2SC5287 is a silicon NPN triple diffused planar transistor manufactured by Sanken Electric. It is designed for high-voltage switching applications such as switching regulators and general-purpose power conversion circuits. The device is supplied in a through-hole TO-3P-3 (SC-65-3) package with a package weight of 6.0 g.
Key absolute maximum ratings include a collector-emitter voltage (VCEO) of 550 V, collector-base voltage (VCBO) of 900 V, and emitter-base voltage (VEBO) of 7 V. Continuous collector current is rated at 5 A with a peak pulse rating of 10 A, and maximum power dissipation is 80 W at a case temperature of 25°C. The maximum junction temperature is 150°C.
The transistor offers a DC current gain (hFE) of 10 to 25 at VCE=4 V and IC=1.8 A. Maximum collector-emitter saturation voltage is 0.5 V at IC=1.8 A and IB=0.36 A. Typical transition frequency is 6 MHz, and typical collector output capacitance is 50 pF. Switching times at VCC=250 V, IC=1.8 A are 0.7 µs turn-on time, 4.0 µs storage time, and 0.5 µs fall time.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.30 | $1.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage VCEO is rated at a maximum of 550 V.
It is offered in a through-hole TO-3P-3 (SC-65-3) package; the supplier device package is TO-3P.
Maximum junction temperature is 150°C and storage temperature range is -55°C to +150°C. Maximum power dissipation is 80W at Tc=25°C.
Sanken's product page lists this part as RoHS compliant (RoHS: YES).
Continuous collector current is rated at 5 A, with a pulse rating of 10 A.
hFE is between 10 and 25 at VCE=4 V and IC=1.8 A.
Maximum VCE(sat) is 0.5 V at IC=1.8 A and IB=0.36 A.