| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1630+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Forward Transfer Gain (|S21e|^2) | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Packing Type | |
| Power | |
| Reverse Transfer Capacitance (Cre) | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Transition Frequency (fT) | |
| Voltage |
The 2SC5227A-5-TB-E from On Semiconductor is an NPN silicon RF transistor designed for low-noise, high-gain amplifier applications up to 1 GHz and beyond. It features a maximum collector-emitter voltage of 10 V and a continuous collector current of 70 mA, with a collector dissipation of 200 mW.
Key electrical characteristics include a minimum DC current gain (hFE) of 135 and a typical transition frequency (fT) of 7 GHz. The transistor offers a typical forward transfer gain (|S21e|^2) of 12 dB at 1 GHz and a low typical noise figure (NF) of 1.0 dB at 1 GHz, making it suitable for RF front-end stages.
The device is housed in a surface-mount CP package (SC-59, SOT-23-3, TO-236-3) with a base, emitter, and collector pinout. It is supplied in tape and reel packaging with 3,000 pieces per reel and is RoHS3 compliant with Pb-free terminations.
The maximum VCEO is 10 V.
The typical fT is 7 GHz, with a minimum of 5 GHz.
Yes, it is RoHS3 compliant and Pb-free per the datasheet.
It is available in a surface-mount package (SOT-23-3, SC-59, TO-236-3).
The maximum junction temperature is 150°C.
The typical noise figure is 1.0 dB at 1 GHz (VCE=5V, IC=7mA).