2SC5226A-4-TL-E RF transistor, NPN, 10V, 70mA, 7GHz, in SC-70 surface-mount package.
Mfr Part #:

2SC5226A-4-TL-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
RF transistor, NPN, 10V, 70mA, 7GHz, in SC-70 surface-mount package.
✓ Total Stock: 55,020 pcs
$ Price Range: $0.16 - $0.75

2SC5226A-4-TL-E Available from 1 distributor

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✓ Non-Authorised
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55,020 pcs
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2SC5226A-4-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Lead Style
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Voltage

2SC5226A-4-TL-E Description

Short technical summary and product information.

The 2SC5226A-4-TL-E is an NPN RF transistor designed for high-frequency applications. It features a maximum collector-emitter voltage of 10V and a collector current of 70mA. The transistor offers a typical gain-bandwidth product of 7 GHz and a forward transfer gain of 12 dB at 1 GHz, making it suitable for low-noise amplifier stages.

 

This device has a low noise figure of 1.0 dB typical at 1 GHz, enhancing signal integrity in receiver front-ends. The DC current gain (hFE) ranges from 90 to 180, ensuring consistent performance across batches.

 

The transistor is housed in a SC-70 (SOT-323) surface-mount package, which is compact and suitable for space-constrained designs. It is supplied in tape and reel packaging with 3000 units per reel. The device is lead-free, as stated in the datasheet.

2SC5226A-4-TL-E Quick Information

Product Type: NPN RF Transistor
Canonical Name: RF Transistor NPN, 10V, 70mA, 7GHz, SC-70
Subcategory: RF Transistors

2SC5226A-4-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

2SC5226A-4-TL-E Estimated Pricing

Qty Low High
1+ $0.75 $0.75
10+ $0.46 $0.46
100+ $0.30 $0.30
500+ $0.23 $0.23
1,000+ $0.20 $0.20
3,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC5226A-4-TL-E Features

  • NPN RF transistor with 7 GHz gain-bandwidth product.
  • Low noise figure of 1.0 dB typical at 1 GHz.
  • High forward transfer gain of 12 dB typical at 1 GHz.
  • Surface-mount SC-70 package for compact designs.
  • Lead-free and RoHS compliant (unverified).

2SC5226A-4-TL-E Applications

  • Ideal for low-noise RF amplifier stages.
  • Used in VHF/UHF oscillators and mixers.
  • Suitable for wireless communication front-ends.
  • Can be used in high-speed switching circuits.

2SC5226A-4-TL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2SC5226A-4-TL-E?

The maximum collector-emitter voltage (VCEO) is 10 V.

What is the package type of the 2SC5226A-4-TL-E?

The device is packaged in SC-70 (SOT-323) with surface-mount mounting.

What is the operating temperature range for the 2SC5226A-4-TL-E?

The junction temperature maximum is 150 °C, and the storage temperature range is -55 to 150 °C.

What is the typical gain-bandwidth product (fT) of this transistor?

The typical gain-bandwidth product is 7 GHz, with a minimum of 5 GHz.

What is the typical noise figure of the 2SC5226A-4-TL-E at 1 GHz?

The typical noise figure is 1.0 dB, with a maximum of 1.8 dB at VCE=5V, IC=7mA, f=1GHz.

Is the 2SC5226A-4-TL-E lead-free?

Yes, the datasheet states that the device is lead-free (Pb-Free).

What is the DC current gain (hFE) range for the 2SC5226A-4-TL-E?

The DC current gain (hFE) ranges from 90 to 180 at VCE=5V, IC=20mA.

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