Mfr Part #:

2SC5200-O(Q)

Mfr Name: Toshiba

Toshiba 2SC5200-O(Q) is an NPN triple diffused power transistor with 230V collector-emitter voltage and 15A collector current. Housed in a TO-3PL through-hole package, it dissipates up to 150W.

✓ Total Stock: 13,356 pcs

$ Price Range: $1.63 - $5.07

2SC5200-O(Q) Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	8,100 pcs On Request	8100 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	5,256 pcs On Request	5256 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2SC5200-O(Q) Description

Short technical summary and product information.

The Toshiba 2SC5200-O(Q) is a silicon NPN triple diffused type power transistor designed for high-power audio amplifier output stages. It features a high breakdown voltage of 230V (VCEO min) and a collector current rating of 15A, making it suitable for 100W class audio amplifiers.

Key electrical characteristics include a DC current gain (hFE) of 80 minimum at 1A/5V, a transition frequency of 30 MHz, and a collector-emitter saturation voltage of 3V maximum at 8A/800mA. The device is complementary to the 2SA1943 PNP transistor.

The transistor is supplied in a TO-3PL (TO-3P(L)) through-hole package with a typical weight of 9.75g. It has a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C.

2SC5200-O(Q) Quick Information

Product Type: Bipolar Junction Transistor (BJT)

Canonical Name: Toshiba 2SC5200-O(Q) NPN Bipolar Power Transistor

Subcategory: Single NPN Power Transistor

2SC5200-O(Q) Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2SC5200-O(Q) Estimated Pricing

Qty	Low	High
1+	$5.07	$5.07
10+	$3.32	$3.32
100+	$2.48	$2.48
500+	$2.07	$2.07
1,000+	$1.92	$1.92
2,500+	$1.80	$1.80
5,000+	$1.63	$1.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC5200-O(Q) Features

High breakdown voltage of 230V VCEO.
Collector current rating of 15A.
Power dissipation of 150W.
Complementary to 2SA1943 PNP transistor.
TO-3PL through-hole package.

2SC5200-O(Q) Applications

100W high fidelity audio amplifier output stage.
Power switching and linear amplifier circuits.
Complementary push-pull amplifier designs.
General purpose high-power NPN applications.

2SC5200-O(Q) FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the 2SC5200-O(Q)?

The minimum collector-emitter voltage (VCEO) is 230V.

What is the maximum collector current rating?

The nominal collector current is 15A.

What package type does the 2SC5200-O(Q use?

It uses a TO-3PL (TO-3P(L)) through-hole package.

What is the power dissipation of this transistor?

The power dissipation is 150W at a case temperature of 25°C.

What is the operating junction temperature range?

The maximum junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.

Is the 2SC5200-O(Q) RoHS compliant?

RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the DC current gain (hFE) of this transistor?

The minimum hFE is 80 at Ic=1A, Vce=5V, and the typical hFE is 60 at Ic=7A, Vce=5V.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	Toshiba
Current	15 A
DC Current Gain (hFE) (Min) @ Ic, Vce	80
Frequency	30 MHz
Junction Temperature	150 °C
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
Power	150 W
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-3P(L)
Tape & Reel	Yes
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Voltage	230 V
Weight	9.75 g