| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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91,560 pcs
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91560 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2SC5200 is a high-power NPN bipolar junction transistor designed for general-purpose switching and linear amplification applications. Manufactured by STMicroelectronics, this through-hole device is housed in a TO-264-3 (TO-264AA) package.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 230V, a maximum collector current (Ic) of 15A, and a maximum power dissipation (Pc) of 150W. The transistor offers a minimum DC current gain (hFE) of 55 at a test condition of Ic=1A and Vce=5V. The maximum collector-emitter saturation voltage (Vce(sat)) is 3V at Ib=800mA and Ic=8A. The typical transition frequency (ft) is 30 MHz.
The device has a maximum operating junction temperature of 150°C. It is designed for through-hole mounting and is supplied in a TO-264 package, which provides efficient heat dissipation for high-power operation.
The maximum collector-emitter voltage (Vce) is 230V.
The maximum collector current (Ic) is 15A.
The maximum power dissipation (Pc) is 150W.
The 2SC5200 is available in a TO-264-3 (TO-264AA) through-hole package.
The maximum operating junction temperature is 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.