| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | 13+15+ | On Request | On Request | |
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC5171 is an NPN epitaxial silicon transistor suitable for power amplifier and driver stage applications. It boasts a high transition frequency (fT) of 200 MHz (typical) at a collector current of 0.3 A and collector-emitter voltage of 5 V.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 180V and a collector current (IC) of up to 2A. The DC current gain (hFE) ranges from 100 to 320 at IC = 0.1A and VCE = 5V, and is typically 50 at IC = 1A and VCE = 5V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.0V at IC = 1A and IB = 0.1A, with a typical value of 0.16V.
This transistor operates within a junction temperature range of -55°C to 150°C and has a storage temperature range of -55°C to 150°C. It is designed for through-hole mounting and has a collector power dissipation of 20W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SC5171 transistor is 2A.
The transition frequency of the 2SC5171 transistor is typically 200 MHz.
The collector-emitter voltage rating for the 2SC5171 transistor is 180V.
The operating temperature range for the 2SC5171 transistor is -55°C to 150°C.
The 2SC5171 transistor is mounted using the through-hole method.