| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,238 pcs
|
2238 pcs | On Request | 1 | On Request | On Request | 2001+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba 2SC5090-O is an NPN RF small signal bipolar transistor designed for VHF~UHF band low noise amplifier applications. This transistor offers a high gain bandwidth product of 10 GHz typical and a low noise figure of 1.1 dB typical at 1 GHz.
Key electrical characteristics include a collector current of 0.04A and a typical S21e squared value of 13 dB at 1 GHz. The device is suitable for applications requiring low noise amplification in the very high frequency (VHF) and ultra high frequency (UHF) bands.
Further specifications such as collector-emitter voltage, collector power dissipation, and operating temperature are typically detailed in the manufacturer's datasheet. The component is likely available in a surface-mount package, common for RF applications, but specific packaging details should be confirmed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 0.04A.
The typical gain bandwidth product is 10 GHz at 1 GHz.
The typical noise figure is 1.1 dB at 1 GHz.
The typical S21e squared value is 13 dB at 1 GHz.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.