| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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180 pcs
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180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC5027 is an NPN silicon transistor manufactured by On Semiconductor, designed for high voltage and high reliability applications. It offers a high collector-emitter voltage (VCEO) of 750V and a collector-base voltage (VCBO) of 850V, making it suitable for power switching applications.
Key electrical characteristics include a peak collector current of 3A and a pulse collector current of 10A. The DC current gain (hFE) ranges from 10 to 40 at IC=0.2A. It also features a current gain bandwidth product (fT) of 15MHz and fast switching times with a fall time of 0.3μs and storage time of 3μs.
This transistor is available in TO-220, TO-220F, and TO-263 packages, supporting through-hole mounting. The operating junction temperature ranges from -55°C to +150°C, with a power dissipation of up to 50W in the TO-220 and TO-263 packages.
The 2SC5027 is specified with RoHS3 compliance, MSL Level 1, and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC5027 transistor is 750V.
The continuous collector current (IC) rating for the 2SC5027 is 3A.
The 2SC5027 transistor is available in TO-220, TO-220F, and TO-263 packages.
The operating temperature range for the 2SC5027 transistor is -55°C to +150°C.
The DC Current Gain (hFE) of the 2SC5027 at IC=0.2A ranges from 10 to 40.
The transition frequency (fT) for the 2SC5027 transistor is 15MHz.