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2SC5010-T1-A RF NPN bipolar transistor from CEL, designed for high-frequency applications. Features 6V collector-emitter breakdown voltage, 30mA collector current, and 12GHz transition frequency in a SOT-523 package.
Mfr Part #:

2SC5010-T1-A

Available from 1 distributors
Mfr Name: California Eastern Laboratories
California Eastern Laboratories
RF NPN bipolar transistor from CEL, designed for high-frequency applications. Features 6V collector-emitter breakdown voltage, 30mA collector current, and 12GHz transition frequency in a SOT-523 package.
✓ Total Stock: 1,500 pcs

2SC5010-T1-A Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
1,500 pcs
On Request
1500 pcs On Request 1 On Request On Request 2012 On Request On Request
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2SC5010-T1-A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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2SC5010-T1-A Description

Short technical summary and product information.

The 2SC5010-T1-A is an NPN RF bipolar junction transistor manufactured by CEL. It is designed for high-frequency amplification and switching applications, offering a transition frequency of 12GHz. The transistor has a collector-emitter breakdown voltage of 6V, a maximum collector current of 30mA, and a power dissipation of 125mW.

 

Key electrical characteristics include a typical gain of 8.5dB and a minimum DC current gain (hFE) of 75 at Ic=10mA, Vce=3V. The noise figure is typically 1.5dB at 2GHz, making it suitable for low-noise RF front-end designs. The device operates up to a maximum junction temperature of 150°C.

 

The transistor is housed in a compact SOT-523 surface-mount package, ideal for space-constrained designs. It is RoHS3 compliant (unverified) and has a moisture sensitivity level of 1 (unlimited). The part is available in tape and reel packaging for automated assembly.

2SC5010-T1-A Quick Information

Product Type: RF Bipolar Junction Transistor (BJT)
Canonical Name: RF Transistor NPN, 6V, 30mA, 12GHz, SOT-523
Subcategory: RF Bipolar Transistors

2SC5010-T1-A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

2SC5010-T1-A Features

  • NPN RF transistor with 12GHz transition frequency.
  • 6V collector-emitter breakdown voltage rating.
  • 30mA maximum collector current capability.
  • SOT-523 surface mount package for compact designs.
  • Typical noise figure of 1.5dB at 2GHz.

2SC5010-T1-A Applications

  • Ideal for low-noise RF amplifier stages.
  • Used in wireless communication front-ends.
  • Suitable for oscillator and mixer circuits.
  • Designed for high-frequency signal processing.

2SC5010-T1-A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the 2SC5010-T1-A?

SOT-523 surface mount package.

What is the maximum operating temperature?

150°C junction temperature.

Is the 2SC5010-T1-A RoHS compliant?

RoHS3 compliant (unverified from official documentation).

What is the transition frequency of this transistor?

12GHz.

What is the typical gain?

8.5dB (typical, exact test condition unknown).

What is the noise figure at 2GHz?

1.5dB typical.

What is the collector-emitter breakdown voltage?

6V.

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