| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The 2SC5008-T1-A is an NPN RF bipolar transistor from Renesas, designed for small-signal amplification in high-frequency circuits. It is part of the company's portfolio of discrete semiconductor products.
Key electrical specifications include a collector-emitter breakdown voltage of 10V, a maximum collector current of 35mA, and a power dissipation of 125mW. The transistor offers a transition frequency of 8GHz, a typical gain of 7.5dB, and a low noise figure of 1.9dB at 2GHz. The minimum DC current gain (hFE) is 80 at 5mA collector current and 3V collector-emitter voltage.
The device is housed in a surface-mount SOT-523 package, enabling compact PCB layouts. It is rated for operation at junction temperatures up to 150°C.
This transistor is suitable for RF amplification, oscillator, and mixer circuits in wireless communication systems, as well as other high-frequency signal processing applications requiring low noise and moderate gain.
| Qty | Low | High |
|---|---|---|
| 752+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150°C (junction).
SOT-523 surface mount package.
RoHS3 compliant (unverified).
8 GHz.
7.5 dB.
1.9 dB at 2 GHz.
35 mA.