| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60,000 pcs
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60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC5007-T1-A is an NPN silicon RF transistor manufactured by CEL (California Eastern Laboratories). It is designed for high-frequency amplifier applications up to 7 GHz. The transistor features a maximum collector-emitter breakdown voltage of 10V and a maximum collector current of 65 mA, with a maximum power dissipation of 125 mW.
Electrical characteristics include a typical transition frequency (fT) of 7 GHz, a minimum DC current gain (hFE) of 80 at 7 mA collector current and 3V collector-emitter voltage, and a typical noise figure of 1.4 dB at 1 GHz. The typical associated gain is 12 dB, making it suitable for low-noise and gain stages.
The device is housed in a surface-mount SOT-523 package (also referred to as supplier device package SOT-523). It is RoHS3 compliant and has an MSL (Moisture Sensitivity Level) of 1 (unlimited). The maximum operating junction temperature is 150°C. Common applications include RF amplifiers, low-noise amplifiers for wireless communications, and oscillator circuits.
10V maximum.
65 mA maximum.
Typical 7 GHz.
Typical 1.4 dB at 1 GHz.
Minimum 80 at Ic=7mA, Vce=3V.
Surface mount SOT-523.
Maximum 150°C.