| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,472 pcs
|
2472 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Tape & Reel | |
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The Renesas 2SC5006-T1 is an NPN silicon epitaxial transistor designed for RF small signal applications, particularly as an amplifier. It operates with a collector-emitter breakdown voltage of up to 12V and can handle a maximum collector current of 100mA.
This transistor boasts a high transition frequency of 4.5GHz, making it suitable for high-frequency circuits. Its typical noise figure is 1.2dB at 1GHz, and it offers a gain of 9dB. The device is housed in an Ultra Super Mini-Mold package, specifically SOT-523, and is available in tape and reel packaging for surface mounting.
With a maximum power dissipation of 125mW and an operating temperature range from -60°C to 150°C, the 2SC5006-T1 is designed for reliable performance in various conditions. Its construction utilizes silicon for the transistor element and plastic/epoxy for the package body.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SC5006-T1 is available in a SOT-523 surface-mount package.
The operating temperature range is -60°C to 150°C.
The maximum collector current is 100 mA.
The maximum collector-emitter voltage is 12 V.
The transition frequency is typically 4.5 GHz.
The typical noise figure is 1.2 dB at 1 GHz.
The maximum power dissipation is 125 mW.