Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,444 pcs
|
1444 pcs | On Request | 1 | On Request | On Request | 0310+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC5001TLR is an NPN bipolar junction transistor manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and high current capability. The transistor offers a collector-emitter breakdown voltage (Vceo) of 20V and a continuous collector current (Ic) rating of 10A, making it suitable for power management and driver circuits. With a DC current gain (hFE) of minimum 120 at 500mA and 2V, and a low collector-emitter saturation voltage of 250mV at 4A, it provides efficient switching performance. The transition frequency (ft) of 150MHz supports applications in the lower RF range. The device is housed in a TO-252-3 (DPak) surface-mount package, also known as CPT3, which allows for compact PCB layouts. It is rated for a maximum power dissipation of 10W and an operating junction temperature of up to 150°C. The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.73 | $1.73 |
| 10+ | $1.11 | $1.11 |
| 100+ | $0.74 | $0.74 |
| 500+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The package is TO-252-3 (DPak, SC-63), also known as CPT3.
The maximum junction temperature is 150°C.
Yes, it is listed as RoHS3 compliant (unverified).
The Vceo is 20V.
The maximum collector current (Ic) is 10A.
The minimum hFE is 120 at Ic=500mA, Vce=2V.
The transition frequency (ft) is 150MHz.