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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
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800 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Ic) | |
| Collector Cutoff Current (ICBO) | |
| Collector Output Capacitance (COB) | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Cutoff Current (ICEO) | |
| Collector-Emitter Voltage (VCEO) | |
| DC Current Transfer Ratio (hFE) | |
| Emitter Cutoff Current (Iebo) | |
| Emitter-Base Voltage (VEBO) | |
| Gain-Bandwidth Product (fT) | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Noise Figure (NF) | |
| Power Dissipation (PC) | |
| Power Gain (PG) | |
| S21 Parameter (|S21|^2) | |
| Storage Temperature Range (TSTG) | |
| Tape & Reel |
The 2SC4926YD-TL-E is a silicon NPN epitaxial RF transistor from Renesas, designed for VHF/UHF wideband amplifier applications. It offers a high gain bandwidth product of 11 GHz typical, making it suitable for high-frequency amplification.
The device provides a power gain of 16.5 dB at 900 MHz and a low noise figure of 1.1 dB at 5 mA, ensuring excellent signal integrity. The DC current gain ranges from 50 to 250 at VCE=5V, IC=20mA.
The transistor is housed in a compact MPAK-4 surface mount package, ideal for space-constrained designs. Maximum ratings include collector-base voltage of 15V, collector-emitter voltage of 8V, collector current of 50mA, and power dissipation of 150mW.
The maximum collector-base voltage is 15V, collector-emitter voltage is 8V, and emitter-base voltage is 1.5V.
The device is available in a MPAK-4 surface mount package.
The storage temperature range is -55°C to +150°C, and the maximum junction temperature is 150°C.
Yes, the 2SC4926YD-TL-E is RoHS3 Compliant.
The typical fT is 11 GHz, with a minimum of 8 GHz.
The typical noise figure is 1.1 dB, with a maximum of 2.0 dB at 900 MHz.
The hFE ranges from 50 to 250 at VCE=5V, IC=20mA.