| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The 2SC4853A-4-TL-E is an NPN RF bipolar junction transistor manufactured by On Semiconductor. It is designed for low-voltage, low-current RF applications, offering a gain-bandwidth product (fT) of 5 GHz typical at VCE=1V and IC=1mA. The device provides a forward transfer gain of 7 dB typical at 1 GHz under the same bias conditions, and 10.5 dB typical at VCE=2V and IC=3mA. Noise figure is 2.6 dB typical at VCE=1V, IC=1mA, f=1GHz, improving to 1.9 dB typical at VCE=2V, IC=3mA.
Key electrical ratings include a collector-to-emitter voltage (VCEO) of 6V, collector-to-base voltage (VCBO) of 12V, emitter-to-base voltage (VEBO) of 1.5V, and a maximum collector current of 15mA. Power dissipation is rated at 90mW, with a junction temperature limit of 150°C. DC current gain (hFE) ranges from 90 to 180 for the -4 rank at VCE=1V, IC=1mA.
The transistor is housed in a compact SC-70/SOT-323 surface-mount package (supplier package 3-MCP), suitable for space-constrained designs. It is supplied in tape and reel packaging with a standard quantity of 3,000 pieces per reel. The device is lead-free and RoHS3 compliant, making it suitable for environmentally conscious manufacturing.
| Qty | Low | High |
|---|---|---|
| 1,488+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gain-bandwidth product (fT) is 5 GHz typical at VCE=1V, IC=1mA.
The maximum collector-to-emitter voltage (VCEO) is 6V.
The maximum collector current (IC) is 15mA.
The junction temperature (Tj) is rated up to 150°C, and the storage temperature range is -55°C to +150°C.
The device is available in an SC-70/SOT-323 surface-mount package (supplier package 3-MCP).
Yes, the device is RoHS3 compliant and lead-free.
The typical noise figure is 2.6 dB at VCE=1V, IC=1mA, f=1GHz, and 1.9 dB at VCE=2V, IC=3mA, f=1GHz.