| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC4681 is an NPN bipolar junction transistor (BJT) suitable for RF applications. It is manufactured by Toshiba and offers a maximum collector-emitter voltage of 1.2kV and a maximum collector current of 50mA.
This transistor is designed to operate within a temperature range up to 150°C. It has a maximum power dissipation rating of 2W, with a nominal power dissipation of 10W. The component has 3 terminals.
Similar parts are available from manufacturers like Hitachi Semiconductor and Fairchild Semiconductor, indicating its common use in electronic designs. The 2SC4681 is part of the broader category of discrete semiconductor products, specifically within the RF BJT transistor segment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the Toshiba 2SC4681 is 50mA.
The maximum collector-emitter voltage of the Toshiba 2SC4681 is 1.2kV.
The maximum collector-emitter saturation voltage of the Toshiba 2SC4681 is 1.5V.
The maximum power dissipation of the Toshiba 2SC4681 is 2W.
The nominal power dissipation of the Toshiba 2SC4681 is 10W.
The maximum operating temperature of the Toshiba 2SC4681 is 150°C.
The Toshiba 2SC4681 has 3 terminals.