2SC4617T1G 2SC4617T1G is a NPN general purpose amplifier transistor from On Semiconductor. It features a 50V collector-emitter voltage, 100mA continuous current, and 125mW power dissipation in a SC-75/SOT-416 surface mount package.
Mfr Part #:

2SC4617T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2SC4617T1G is a NPN general purpose amplifier transistor from On Semiconductor. It features a 50V collector-emitter voltage, 100mA continuous current, and 125mW power dissipation in a SC-75/SOT-416 surface mount package.
✓ Total Stock: 59,877 pcs

2SC4617T1G Available from 1 distributor

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2SC4617T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SC4617T1G Description

Short technical summary and product information.

The 2SC4617T1G is an NPN silicon general purpose amplifier transistor manufactured by On Semiconductor (onsemi). It is designed for low-power surface mount applications where board space is at a premium, housed in the compact SC-75/SOT-416 package.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 50V, continuous collector current of 100mA, and maximum power dissipation of 125mW. The DC current gain (hFE) is a minimum of 120 at 1mA, 6V, with typical values ranging from 210 to 460. The transition frequency (fT) is 180MHz, making it suitable for general amplification up to VHF frequencies. Vce saturation is a maximum of 400mV at 5mA base current and 60mA collector current.

 

The device is surface mountable, supplied in tape and reel packaging with 3000 units per reel. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, as verified by the manufacturer's datasheet.

2SC4617T1G Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: 2SC4617T1G NPN General Purpose Amplifier Transistor
Subcategory: NPN General Purpose Amplifier

2SC4617T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SC4617T1G Features

  • NPN general purpose amplifier transistor.
  • 50V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • 125mW power dissipation capability.
  • SC-75/SOT-416 surface mount package.

2SC4617T1G Applications

  • General purpose amplifier circuits.
  • Low-power switching applications.
  • Signal amplification in portable devices.
  • VHF amplifier stages up to 180MHz.
  • Space-constrained PCB designs.

2SC4617T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the 2SC4617T1G?

The collector-emitter breakdown voltage (V(BR)CEO) is 50V DC.

What package is the 2SC4617T1G available in?

It is available in the SC-75 (SOT-416) surface mount package.

What is the maximum operating temperature?

The maximum junction temperature (TJ) is 150°C.

Is the 2SC4617T1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as per the manufacturer's datasheet.

What is the DC current gain (hFE) of this transistor?

The minimum hFE is 120 at Ic=1mA and Vce=6V. Typical values range from 210 to 460.

What is the transition frequency of the 2SC4617T1G?

The transition frequency (fT) is 180MHz.

What is the maximum collector current?

The continuous collector current is 100mA.

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