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2SC4617G 2SC4617G is an NPN bipolar junction transistor rated for 50V collector-emitter breakdown voltage and 100mA collector current. It comes in a surface-mount SC-75 SOT-416 package.
Mfr Part #:

2SC4617G

Available from 1 distributors
Mfr Name: Sanyo Denki
Sanyo Denki
2SC4617G is an NPN bipolar junction transistor rated for 50V collector-emitter breakdown voltage and 100mA collector current. It comes in a surface-mount SC-75 SOT-416 package.
✓ Total Stock: 36,540 pcs

2SC4617G Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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36,540 pcs
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36540 pcs On Request 1 On Request On Request On Request On Request On Request
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2SC4617G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2SC4617G Description

Short technical summary and product information.

The 2SC4617G is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage (Vceo) of 50V and a maximum collector current (Ic) of 100mA, making it suitable for low-power circuits.

 

Electrical characteristics include a DC current gain (hFE) of 120 minimum at 1mA collector current and 6V Vce, and a transition frequency (ft) of 180MHz. The maximum Vce saturation voltage is 400mV at a base current of 5mA and collector current of 60mA. Power dissipation is rated at 125mW.

 

The transistor is housed in a surface-mount SC-75 (SOT-416) package, which is compact and suitable for space-constrained PCB designs. The operating junction temperature is rated up to 150°C.

2SC4617G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SC4617G NPN Bipolar Transistor
Subcategory: Single NPN

2SC4617G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SC4617G Features

  • NPN bipolar junction transistor design.
  • Rated for 50V collector-emitter breakdown voltage.
  • 100mA maximum collector current capability.
  • 180MHz transition frequency for RF applications.
  • Surface-mount SC-75 SOT-416 package.

2SC4617G Applications

  • General purpose switching and amplification circuits.
  • Low-power signal processing applications.
  • Portable and battery-powered electronic devices.
  • High-frequency circuits up to 180MHz.

2SC4617G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the 2SC4617G?

The 2SC4617G is available in a surface-mount SC-75 (SOT-416) package.

What is the maximum operating temperature of the 2SC4617G?

The maximum operating junction temperature is 150°C.

What is the collector-emitter breakdown voltage of the 2SC4617G?

The collector-emitter breakdown voltage (Vceo) is 50V.

What is the DC current gain (hFE) of the 2SC4617G?

The minimum DC current gain (hFE) is 120 at Ic=1mA and Vce=6V.

What is the transition frequency of the 2SC4617G?

The transition frequency (ft) is 180 MHz.

Is the 2SC4617G RoHS compliant?

The part is listed as RoHS3 Compliant, but this data is unverified.

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