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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base Current | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage (Emitter Open) | |
| Collector-Emitter Voltage (E-B Short) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage (Collector Open) | |
| Fall Time | |
| Frequency | |
| I_C (Maximum) | |
| Junction Temperature | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| P_C (Maximum @ TC = 25 °C) | |
| P_C (Maximum @ Ta = 25 °C) | |
| Package Style | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| T Stg (Maximum @ IB 1 = 0.16 A, IB 2 = −0.32 A) | |
| T_STG (Minimum/Maximum) | |
| Termination Style | |
| Transistor Type | |
| Turn On Time | |
| V_CE(sat) (Maximum @ IC = 0.8 A, IB = 0.16 A) | |
| V_CEO (Maximum @ IC = 10 mA, IB = 0) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| f_T (Minimum @ VCE = 5 V, IC = 0.15 A, f = 1 MHz) | |
| h_FE (Minimum @ VCE = 5 V, IC = 0.1 A) | |
| h_FE (Minimum @ VCE = 5 V, IC = 0.8 A) |
The Panasonic 2SC4420 is a silicon NPN triple diffusion planar transistor designed for high breakdown voltage and high-speed switching applications. It is housed in a TOP-3F full-pack package (EIAJ SC-92) with solder dip termination and 5.45 mm lead spacing, allowing easy mounting to a heat sink with a single screw.
Key electrical specifications include a collector-emitter voltage (VCEO) of 800 V, collector-base voltage (VCBO) of 900 V, and emitter-base voltage (VEBO) of 7 V. The maximum collector current is 3 A (5 A peak), with a base current of 1 A. DC current gain (hFE) is minimum 8 at 0.1 A and 6 at 0.8 A. The transistor offers a transition frequency of 10 MHz and fast switching times: turn-on time 0.7 µs, storage time 2.5 µs, and fall time 0.3 µs.
Maximum collector power dissipation is 70 W at case temperature 25°C, derated to 3 W at ambient temperature 25°C. The junction temperature can reach up to 150°C, with storage temperature range -55 to +150°C. The collector-emitter saturation voltage is 1.5 V at 0.8 A collector current and 0.16 A base current.
This transistor is suitable for high-voltage high-speed switching circuits such as switching power supplies, inverters, and motor control. Its wide safe operation area and linear hFE characteristics make it reliable for demanding applications.
The maximum collector-emitter voltage (VCEO) is 800 V.
The 2SC4420 is available in a TOP-3F (EIAJ SC-92) through-hole package with solder dip termination.
The maximum junction temperature is 150°C, and storage temperature range is -55 to +150°C.
Yes, the datasheet states compliance with the RoHS Directive (EU 2002/95/EC).
The maximum collector current is 3 A, with a peak of 5 A.
Minimum hFE is 8 at VCE=5V, IC=0.1A and 6 at VCE=5V, IC=0.8A.
Turn-on time is 0.7 µs, storage time 2.5 µs, and fall time 0.3 µs.